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ddr3 [2016/05/30 18:45] gongyu |
ddr3 [2016/05/30 18:46] gongyu |
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| Double data rate type three SDRAM (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. | Double data rate type three SDRAM (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. | ||
| - | {{ :4gb_ddr3_so-dimm.jpg |}} | + | {{ :4gb_ddr3_so-dimm.jpg |400}} |
| DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. | DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. | ||
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| {{ :400px-laptop_sodimm_ddr_memory_comparison_v2.svg.png |}} | {{ :400px-laptop_sodimm_ddr_memory_comparison_v2.svg.png |}} | ||
| - | <WRAP centeralign> Notebook and convertible PCs (SO-DIMM)**</WRAP> | + | <WRAP centeralign> **Notebook and convertible PCs (SO-DIMM)**</WRAP> |
| Compared to DDR2 memory, DDR3 memory uses less power. This reduction comes from the difference in supply voltages: 1.8 V or 1.9 V for DDR2 versus 1.35 V or 1.5 V for DDR3. The 1.5 V supply voltage works well with the 90 nanometer fabrication technology used in the original DDR3 chips.[citation needed] Some manufacturers further propose using "dual-gate" transistors to reduce leakage of current. | Compared to DDR2 memory, DDR3 memory uses less power. This reduction comes from the difference in supply voltages: 1.8 V or 1.9 V for DDR2 versus 1.35 V or 1.5 V for DDR3. The 1.5 V supply voltage works well with the 90 nanometer fabrication technology used in the original DDR3 chips.[citation needed] Some manufacturers further propose using "dual-gate" transistors to reduce leakage of current. | ||